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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1730 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The PA1730 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES * Low on-resistance 1.44 RDS(on)1 = 9.5 m MAX. (VGS = -10 V, ID = -6.5 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 0.3 4.4 +0.10 -0.05 0.8 RDS(on)2 = 13.5 m MAX. (VGS = -4.5 V, ID = -6.5 A) 5 RDS(on)3 = 15.0 m MAX. (VGS = -4.0 V, ID = -6.5 A) * Low Ciss : Ciss = 3800 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8) 0.15 0.05 MIN. 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 PA1730G ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg -30 V V A A W C C Gate Gate Protection Diode # 20 # 13.0 # 52.0 Body Diode Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature 2.2 150 -55 to +150 Source Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14284EJ1V0DS00 (1st edition) Date Published November 1999 NS CP(K) Printed in Japan The mark 5 shows major revised points. (c) 1999 PA1730 ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 TEST CONDITIONS VGS = -10 V, ID = -6.5 A VGS = -4.5 V, ID = -6.5 A VGS = -4.0 V, ID = -6.5 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -6.5 A VDS = -30 V, VGS = 0 V VGS = # 20 V, VDS = 0 V VDS = -10 V VGS = 0 V f = 1 MHz ID = -6.5 A VGS(on) = -10 V VDD = -15 V RG = 10 ID = -13.0 A VDD = -24 V VGS = -10 V IF = 13 A, VGS = 0 V IF = 13 A, VGS = 0 V di/dt = 100 A/ s 3800 1200 500 40 240 230 160 70 9 17 0.80 53 57 MIN. TYP. 7.6 10.3 11.3 MAX. 9.5 13.5 15.0 UNIT m m m V S 5 Gate to Source Cut-off Voltage Forward Transfer Admittance RDS(on)3 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr -1.0 11.0 -1.6 23.0 -2.5 5 Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -1 # 10 A A pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME D.U.T. RL VGS VGS Wave Form TEST CIRCUIT 2 GATE CHARGE D.U.T. IG = 2 mA 10 % 90 % 90 % ID VGS (on) 90 % RL VDD PG. RG RG = 10 0 ID VDD PG. 50 VGS 0 = 1 s Duty Cycle 1 % ID Wave Form 0 10 % td (on) ton tr td (off) toff 10 % tf 2 Data Sheet G14284EJ1V0DS00 PA1730 5 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 Mounted on ceramic substrate of 1200mm 2 x 2.2mm 0 20 40 60 80 100 120 140 160 80 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA -100 ID(pulse) = 52.0A 100s d PW ite V) =1 im 0 ID(DC) = 13.0A P )L 1 m W on - s S( = =1 RD GS 0m PW (V Po s =1 we 00 rD m s iss ip at io n Li m ite d Remark Mounted on ceramic substrate of 1200 mm x 2.2 mm 2 ID - Drain Current - A -10 -1 -0.1 TA = 25 C Single Pulse -0.01 -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - C/W Rth(ch-A) = 56.8 C/W 10 1 0.1 Mounted on ceramic substrate of 1200 mm2 x 2.2 mm 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet G14284EJ1V0DS00 3 PA1730 FORWARD TRANSFER CHARACTERISTICS -100 -10 VDS = -10 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -60 -50 Pulsed VGS = -10 V -4.5 V -4.0 V ID - Drain Current - A ID - Drain Current - A -2 -3 Pulsed -4 -1 -0.1 -0.01 -0.001 TA = 150C 125C 75C 25C -25C -50C -40 -30 -20 -10 -0.0001 0 -1 0 -0.2 -0.4 -0.6 -0.8 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V |yfs| - Forward Transfer Admittance - S 10 TA = -50C -25C 25C 75C 125C 150C VDS = -10 V Pulsed RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed ID = -13.0 A -6.5 A 20 1 10 -0.1 -1 -10 -100 0 -5 -10 -15 ID- Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V Pulsed -2.0 VDS = -10 V ID = -1 mA 15 VGS = -4.0 V 10 VGS = -4.5 V VGS = -10 V 5 -1.5 -1.0 -0.5 0 0.1 0 -1 -10 -100 - 1000 -50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - C 4 Data Sheet G14284EJ1V0DS00 PA1730 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed ISD - Diode Forward Current - A 20 18 16 14 12 10 8 6 4 -50 0 50 100 ID = -6.5A 150 -10 V VGS = -4.0 V -4.5 V 10 VGS = -4.0 V 1 0V 0.1 0.01 0.001 0.00 0.50 1.00 1.50 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF tr td(off) tf 100 td(on) Ciss 1 000 Coss Crss 100 10 VDS = -15 V VGS = -10 V RG = 10 -10 -100 VGS = 0 V f = 1 MHz -0.1 -1 -10 -100 1 -0.1 -1 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DIODE CURRENT VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns -30 VDS = -24 V -15 V -6 V VGS -12 -10 -8 -6 100 -20 10 -10 VDS 0 10 20 30 40 50 60 70 -4 -2 0 -0.1 -1 -10 -100 IF - Diode Current - A QG - Gate Charge - nC VGS - Gate to Source Voltage - V di/dt = 100 A/ s VGS = 0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS -40 ID = -13.0 A Data Sheet G14284EJ1V0DS00 5 PA1730 [MEMO] 6 Data Sheet G14284EJ1V0DS00 PA1730 [MEMO] Data Sheet G14284EJ1V0DS00 7 PA1730 * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8 |
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